METHOD OF PRODUCING MONOCRYSTALLINE SILICON
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United States of America Patent
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Mar 26, 2015
app pub date -
Dec 5, 2012
filing date -
Jan 27, 2012
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Abstract
A method of producing a crystalline product comprising a high percentage by volume monocrystalline material in a crystal growth apparatus is disclosed. The method comprises the steps of providing a crucible comprising feedstock and at least one monocrystalline seed, melting the feedstock without substantially melting the monocrystalline seed under controlled conditions, and forming the crystalline product by solidification of the melt also under controlled conditions. The resulting crystalline product comprises greater than 50% by volume monocrystalline material.
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