EPITAXIAL SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Mar 26, 2015
app pub date -
Apr 19, 2013
filing date -
May 11, 2012
priority date (Note) -
Abandoned
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Abstract
The present invention provides an epitaxial substrate including a silicon substrate containing oxygen atoms in concentrations of 4×1017 cm−3 or more and 6×1017 cm−3 or less and containing boron atoms in concentrations of 5×1018 cm−3 or more and 6×1019 cm−3 or less and a semiconductor layer that is placed on the silicon substrate and is made of a material having a thermal expansion coefficient different from the thermal expansion coefficient of the silicon substrate. As a result, the epitaxial substrate in which the occurrence of warpage caused by the stress between the silicon substrate and the semiconductor layer is suppressed is provided.
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