PHOTODIODE
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Mar 26, 2015
app pub date -
Sep 24, 2013
filing date -
Sep 24, 2013
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A photodiode includes a first-type substrate. A second-type doped well and a second-type doped region are formed in the first-type substrate. An isolation region is formed to enclose the peripheral side of the second-type doped well, and separated from the second-type doped well. The second-type doped region is formed in the second-type doped well and extends from the surface of the second-type doped well. A protective layer covers the first-type substrate. A contact conductor including a contact layer and a conductive strip penetrates through the protective layer. The contact layer is formed on the bottom end of the conductive strip and in contact with the second-type doped region to make an electrical connection.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully