SEMICONDUCTOR DEVICE HAVING THROUGH-SILICON VIA
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United States of America Patent
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Issued Date -
Mar 19, 2015
app pub date -
Dec 16, 2013
filing date -
Sep 13, 2013
priority date (Note) -
Abandoned
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Abstract
A semiconductor having through-silicon via includes a substrate, an outer dielectric liner, an inner dielectric liner and a conductive contacting layer. The substrate has a top surface and a bottom surface and defining at least one through-silicon via going through the top surface toward the bottom surface. The outer dielectric liner covers the top surface of the substrate. The inner dielectric liner covers a wall of the through-silicon via. The thickness of the inner dielectric liner reduces from the top surface toward the bottom surface. The conductive contacting liner over fills the through-silicon via and is exposed on the top surface.
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