LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME
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United States of America Patent
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Issued Date -
Mar 12, 2015
app pub date -
Apr 12, 2012
filing date -
Apr 5, 2012
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Abandoned
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Abstract
Provided is a light emitting diode having a nanostructure capping pattern and a method of manufacturing the same. A light-emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer between the first and second semiconductor layers is provided. A nanostructure is provided on the light-emitting structure and a nanostructure capping pattern covering the nanostructure is provided. A refractive index of the nanostructure capping pattern is higher than that of air and lower than that of the nanostructure.
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