METHOD OF FORMING TIN OXIDE SEMICONDUCTOR THIN FILM
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United States of America Patent
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Issued Date -
Mar 5, 2015
app pub date -
Jul 17, 2014
filing date -
Aug 29, 2013
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Abandoned
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Abstract
A method of forming a tin oxide semiconductor thin film includes preparing a precursor solution including a tin oxide semiconductor, coating the precursor solution on a substrate; and performing a heat treatment on the substrate coated with the precursor solution. A tin compound having a different tin valence according to a semiconductor type of the tin oxide semiconductor may be used in the precursor solution.
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