INSULATION SHEET MADE FROM SILICON NITRIDE, AND SEMICONDUCTOR MODULE STRUCTURE USING THE SAME

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United States of America Patent

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14534808

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An insulation sheet made from silicon nitride comprising: a sheet-shaped silicon-nitride substrate which contains β-silicon-nitride crystal grains as a main phase; and a surface layer which is formed on one face or both front and back faces of surfaces of the silicon-nitride substrate and is formed from a resin or a metal which includes at least one element selected from among In, Sn, Al, Ag, Au, Cu, Ni, Pb, Pd, Sr, Ce, Fe, Nb, Ta, V and Ti. A semiconductor module structure using the insulation sheet made from silicon nitride.

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Patent Owner(s)

Patent OwnerAddress
KABUSHIKI KAISHA TOSHIBA1-1 SHIBAURA 1-CHOME MINATO-KU TOKYO 105-0023

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Inventor Name Address # of filed Patents Total Citations
NABA, Takayuki Tokyo, JP 28 372

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