FIELD EMISSION DEVICES AND METHODS OF MANUFACTURING GATE ELECTRODES THEREOF

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United States of America Patent

APP PUB NO 20150060757A1
SERIAL NO

14471713

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Abstract

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A field emission device may comprise: an emitter comprising a cathode electrode and an electron emission source supported by the cathode electrode; an insulating spacer around the emitter, the insulating spacer forming an opening that is a path of electrons emitted from the electron emission source; and/or a gate electrode comprising a graphene sheet covering the opening. A method of manufacturing a gate electrode may comprise: forming a graphene thin film on one surface of a conductive film; forming a mask layer having an etching opening on another surface of the conductive film, wherein the etching opening exposes a portion of the conductive film; partially removing the conductive film through the etching opening to partially expose the graphene thin film; and/or removing the mask layer.

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Patent Owner(s)

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KUMOH NATIONAL INSTITUTE OF TECHNOLOGY INDUSTRY-ACADEMIC COOPERATION FOUNDATION(YANGHO-DONG) 61 DAEHAK-RO GUMI-SI GYEONGSANGBUK-DO 39177 39177

International Classification(s)

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  • 2014 Application Filing Year
  • H01J Class
  • 2291 Applications Filed
  • 1924 Patents Issued To-Date
  • 83.99 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances2014201520162017201820192020202120222023202420250255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
KIM, Do-yoon Hwaseong-si, KR 23 148
KIM, Yong-chul Seoul, KR 67 500
LEE, Chang-soo Seoul, KR 544 19309
LEE, Dong-gu Gumi-si, KR 6 82
PARK, Shang-hyeun Yongin-si, KR 66 242

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  • 13 Citation Count
  • H01J Class
  • 80.54 % this patent is cited more than
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Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges30112922387930227322201 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 90100 +010020030040050060070080090010001100120013001400

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