P-TYPE DOPING OF II-VI MATERIALS WITH RAPID VAPOR DEPOSITION USING RADICAL NITROGEN
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United States of America Patent
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Issued Date -
Feb 26, 2015
app pub date -
Aug 22, 2014
filing date -
Aug 22, 2013
priority date (Note) -
Abandoned
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Abstract
Apparatus and methods to incorporate p-type dopants in II-VI semiconducting layers are disclosed herein. In some embodiments, radical nitrogen is introduced in a physical vapor deposition apparatus operating at moderate pressures (e.g. 10−5 Torr to 100 Torr). The radical nitrogen allows for in-situ doping of II-VI materials, such as ZnTe, to degenerate levels.
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