ANNEALING PROCESS FOR INTEGRATED GAS SENSORS
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United States of America Patent
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Feb 19, 2015
app pub date -
Aug 11, 2014
filing date -
Aug 16, 2013
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Abstract
A method of manufacturing an integrated metal oxide gas sensor is described including the steps of depositing a composition with metal oxide particles or precursors thereof at the desired location on a substrate including electronic components followed by a step of heating the substrate whereby the heating step is designed such that it creates a local temperature difference between the location of the deposited composition and the location of more temperature sensitive parts of the sensor such as the electronic components and is interrupted before the temperature of the substrate at the location of the electronic components reaches a threshold above which the more sensitive parts can be damaged.
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