Method for preparing semiconductor nanocrystals

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United States of America Patent

PATENT NO 9263710
APP PUB NO 20150044806A1
SERIAL NO

14461070

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Abstract

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A method for preparing semiconductor nanocrystals including a core and an overcoating layer is disclosed. According to one aspect of the invention, the method comprises preparing more than one batch of cores comprising a first semiconductor material and having a maximum emission peak within a predetermined spectral region, wherein each batch of cores is characterized by a first excitonic absorption peak at an absorption wavelength and a maximum emission peak at an emission wavelength; selecting a batch of cores from the batches prepared wherein the selected batch is characterized by a difference between the absorption wavelength and the emission wavelength that is less than or equal to 13; and overcoating the cores of the selected batch with a layer comprising a second semiconductor material.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDSUWON-SI

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Breen, Craig A Somerville, US 3 9
Puri, Mayank Minneapolis, US 4 0

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