METHOD OF GROWING INGOT AND INGOT
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United States of America Patent
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Issued Date -
Feb 12, 2015
app pub date -
Nov 30, 2011
filing date -
Apr 23, 2012
priority date (Note) -
Abandoned
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Abstract
Provided is a method of growing an ingot. The method of growing the ingot includes melting a silicon to prepare a silicon melt solution, preparing a seed crystal having a crystal orientation [110], growing a neck part from the seed crystal, and growing an ingot having the crystal orientation [110] from the neck part. The neck part has a diameter of about 4 mm to about 8 mm.
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