HETEROJUNCTION SOLAR CELL BASED ON EPITAXIAL CRYSTALLINE-SILICON THIN FILM ON METALLURGICAL SILICON SUBSTRATE DESIGN
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United States of America Patent
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N/A
Issued Date -
N/A
app pub date -
Oct 27, 2014
filing date -
Mar 10, 2009
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
One embodiment of the present invention provides a heterojunction solar cell. The solar cell includes a metallurgical-grade Si (MG-Si) substrate, a layer of heavily doped crystalline-Si situated above the MG-Si substrate, a layer of lightly doped crystalline-Si situated above the heavily doped crystalline-Si layer, a backside ohmic-contact layer situated on the backside of the MG-Si substrate, a passivation layer situated above the heavily doped crystalline-Si layer, a layer of heavily doped amorphous Si (a-Si) situated above the passivation layer, a layer of transparent-conducting-oxide (TCO) situated above the heavily doped a-Si layer, and a front ohmic-contact electrode situated above the TCO layer.
First Claim
Other Claims data not available