LOW RDSON DEVICE AND METHOD OF MANUFACTURING THE SAME
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United States of America Patent
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Issued Date -
Feb 5, 2015
app pub date -
Jul 31, 2014
filing date -
Aug 5, 2013
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A device and method of making thereof are disclosed. The device includes a substrate having a device region for a switch transistor. The device includes a switch transistor having a gate disposed on the substrate in the device region and first and second heavily doped regions disposed adjacent to the gate. The first heavily doped region serves as a source region of the switch transistor and the second heavily doped region serves as a drain region of the switch transistor. The drain region includes a lightly doped diffusion (LDD) region adjacent thereto and the source region is devoid of a LDD region.
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