Method to Improve Charge Trap Flash Memory Core Cell Performance and Reliability
Number of patents in Portfolio can not be more than 2000
United States of America Patent
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Issued Date -
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app pub date -
Sep 15, 2014
filing date -
Nov 19, 2012
priority date (Note) -
Abandoned
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Abstract
A semiconductor processing method to provide a high quality bottom oxide layer and top oxide layer in a charged-trapping NAND and NOR flash memory. Both the bottom oxide layer and the top oxide layer of NAND and NOR flash memory determines array device performance and reliability. The method describes overcomes the corner thinning issue and the poor top oxide quality that results from the traditional oxidation approach of using pre-deposited silicon-rich nitride.
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- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
MONTEREY RESEARCH LLC | 3945 FREEDOM CIRCLE SUITE 900 SANTA CLARA CA 95054 |
International Classification(s)

- 2014 Application Filing Year
- H01L Class
- 23828 Applications Filed
- 21803 Patents Issued To-Date
- 91.51 % Issued To-Date
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Chen, Tung-Sheng | Cupertino, US | 17 | 67 |
# of filed Patents : 17 Total Citations : 67 | |||
Fang, Shenqing | Fremont, US | 127 | 970 |
# of filed Patents : 127 Total Citations : 970 |
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- H01L Class
- 0 % this patent is cited more than
- 10 Age
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