NITRIDE-BASED FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING THE SAME
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United States of America Patent
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Issued Date -
Feb 5, 2015
app pub date -
Aug 4, 2014
filing date -
Aug 5, 2013
priority date (Note) -
Abandoned
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Abstract
Disclosed herein is a GaN-based transistor. The GaN-based transistor includes source electrodes, first switching semiconductor layers of a first conductivity type formed under the respective source electrodes, second switching semiconductor layers of a second conductivity type formed under the respective first switching semiconductor layers, and third switching semiconductor layers of the first conductivity type surrounding lower parts of the second switching semiconductor layers and sides of the first switching semiconductor layers and the second switching semiconductor layers. Gates are formed each having vertical faces or inclined faces in which a channel is formed on sides of the first switching semiconductor layer and the second switching semiconductor layer. Gate insulating layers are formed under the gates, and a drain electrode electrically is coupled to the source electrodes along a flow of charges in a vertical direction that passes through the channels.
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