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United States of America Patent

APP PUB NO 20150034837A1
SERIAL NO

13956798

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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An ion source includes an ion source chamber, a gas source to provide a fluorine-containing gas species to the ion source chamber and a cathode disposed in the ion source chamber configured to emit electrons to generate a plasma within the ion source chamber. The ion source chamber and cathode are comprised of a refractory metal. A phosphide insert is disposed within the ion source chamber and presents an exposed surface area that is configured to generate gas phase phosphorous species when the plasma is present in the ion source chamber, wherein the phosphide component is one of boron phosphide, tungsten phosphide, aluminum phosphide, nickel phosphide, calcium phosphide and indium phosphide.

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Patent Owner(s)

Patent OwnerAddress
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES INC35 DORY ROAD GLOUCESTER MA 01930

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cobb, Eric R Danvers, US 15 165
Koo, Bon-Woong Andover, US 92 1020
Levay, William T Rockport, US 3 19
White, Richard M Newmarket, US 47 2320

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