EPITAXIAL SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
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United States of America Patent
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Jan 29, 2015
app pub date -
Feb 14, 2013
filing date -
Feb 20, 2012
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Abstract
The present invention includes: a silicon-based substrate; and an epitaxial growth layer that has a configuration in which first and second nitride semiconductor layers having different lattice constants and thermal expansion coefficients are alternately laminated, and is arranged on the silicon-based substrate so that a film thickness thereof is gradually reduced at an outer edge portion. As a result, there are provided an epitaxial substrate and a semiconductor device in which generation of cracks at the outer edge portion is suppressed, and a method for manufacturing the semiconductor device.
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