COMPOUND SEMICONDUCTOR SOLAR BATTERY AND METHOD OF MANUFACTURING LIGHT ABSORPTION LAYER OF COMPOUND SEMICONDUCTOR SOLAR BATTERY
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United States of America Patent
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Issued Date -
Jan 29, 2015
app pub date -
Feb 28, 2013
filing date -
Mar 2, 2012
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Abandoned
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Abstract
A solar battery capable of increasing conversion efficiency compared with a conventional solar battery using a chalcopyrite p-type light absorption layer. A light absorption layer of the solar battery is a p-type semiconductor layer including Cu, Ga, and an element selected from group VIb elements. A photoluminescence spectrum or a cathode luminescence spectrum obtained from the light absorption layer includes an emission peak with the half-value width of not less than 1 meV and not more than 15 meV. The ratio of the particles with the grain size of not less than 2 μm and not more than 8 μm in a surface of the light absorption layer to the surface area of the entire film is not less than 90%.
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