SILICON-CONTAINING FILM AND METHOD FOR FORMING SILICON-CONTAINING FILM
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United States of America Patent
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Issued Date -
Jan 29, 2015
app pub date -
Jan 16, 2013
filing date -
Mar 7, 2012
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Abandoned
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Abstract
A silicon-containing film includes a first chemical vapor deposition layer and a second chemical vapor deposition layer. The first chemical vapor deposition layer includes elemental silicon. The first chemical vapor deposition layer is formed by a plasma CVD method such that oxygen concentration is greater than or equal to 0% by element and less than 10% by element. The second chemical vapor deposition layer includes elemental silicon. The second chemical vapor deposition layer is formed by the plasma CVD method such that oxygen concentration is greater than 35% by element and less than or equal to 70% by element. A ratio of the thickness of the second chemical vapor deposition layer relative to the thickness of the first chemical vapor deposition layer is 1.5-9.
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