METHOD FOR SIDEWALL SPACER LINE DOUBLING USING POLYMER BRUSH MATERIAL AS A SACRIFICIAL LAYER
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United States of America Patent
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Issued Date -
Jan 22, 2015
app pub date -
Jul 16, 2013
filing date -
Jul 16, 2013
priority date (Note) -
Abandoned
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Abstract
A method for sidewall spacer line doubling uses sacrificial sidewall spacers. A mandrel layer is deposited on a substrate and patterned into mandrel stripes with a pitch double that of the desired final line pitch. A functionalized polymer is deposited over the mandrel stripes and into the gaps between the stripes. The functionalized polymer has a functional group that reacts with the surface of the mandrel stripes when heated to graft a monolayer of polymer brush material onto the sidewalls of the mandrel stripes. A layer of etch mask material is deposited into the gaps between the polymer brush sidewall spacers to form interpolated stripes between the mandrel stripes. The polymer brush sidewall spacers are removed, leaving on the substrate a pattern of mandrel stripes and interpolated stripes with a pitch equal to the desired final line pitch. The stripes function as a mask to etch the substrate.
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