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Abstract

In the method for producing a monocrystalline metal-semiconductor compound on the surface of a semiconducting functional layer, initially a supply layer comprising the metal is applied to the functional layer. Thereafter, the reaction between the metal and the functional layer is triggered by way of annealing. The supply layer ends at no greater than a layer thickness of 5 nm from the surface of the functional layer, or it transitions at no greater than this layer thickness into a region in which the metal diffuses more slowly than in the region that directly adjoins the functional layer. This measure advantageously allows diffusion flow of the metal into the functional layer to be prevented. This depends precisely on whether the metal-semiconductor compound is monocrystalline. The supply layer can comprise at least two layers made of the metal or an alloy of the metal, which are separated from each other by a diffusion barrier, but can also comprise a layer that is made of the metal and that directly adjoins the functional layer and at least one layer made of an alloy of the metal.

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