LIGHT EMITTING DIODES WITH QUANTUM DOT PHOSPHORS
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United States of America Patent
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Issued Date -
Jan 22, 2015
app pub date -
Sep 16, 2014
filing date -
Jan 18, 2012
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Abandoned
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Abstract
A quantum well-based p-i-n light emitting diode is provided that includes nanopillars with an average linear dimension of between 50 nanometers and 1 micron. The nanopillars include a laminar layer of quantum wells capable of non-radiative energy transfer to quantum dot nanocrystals. Quantum dot-Quantum well coupling through the side walls of the nanopillar-configured LED structure achieves a close proximity between quantum wells and quantum dots while retaining the overlying contact electrode structures. An white LED with attractive properties relative to conventional incandescent and fluorescence lighting devices is produced.
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