Atomic Layer Deposition Using Radicals Of Gas Mixture
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United States of America Patent
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Issued Date -
Jan 22, 2015
app pub date -
Oct 1, 2014
filing date -
Feb 16, 2011
priority date (Note) -
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Abstract
Performing atomic layer deposition (ALD) using radicals of a mixture of nitrogen compounds to increase the deposition rate of a layer deposited on a substrate. A mixture of nitrogen compound gases is injected into a radical reactor. Plasma of the compound gas is generated by applying voltage across two electrodes in the radical reactor to generate radicals of the nitrogen compound gases. The radicals are injected onto the surface of a substrate previously injected with source precursor. The radicals function as a reactant precursor and deposit a layer of material on the substrate.
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