Importance

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Abstract

A method for producing a solar cell with a selective emitter is disclosed. A semiconductor substrate (1) is provided. A layer (3) of dopant source material with a dopant type opposite to the dopant type of the substrate (1) is formed at a surface of the substrate (1). By applying heat to the layer (3), a homogeneous lightly doped emitter region (5) is formed. In a first lasering step, selective heavily doped emitter regions (11) are formed by applying laser light (7) to contact surface areas (9). Optionally, the layer (3) is subsequently removed and an additional dielectric layer (15) is applied to the front side of the substrate (1). In a second lasering step, the layer (3) or the layer (15) are locally removed by applying laser light (21) to the contact surface areas (9), thereby locally exposing the surface of the substrate (1). In the locally exposed contact surface areas (9), metal contacts (23) are finally formed, using for example metal-plating techniques. Using two different lasering steps for laser doping, on the one hand, and laser removal for forming the metallization mask, on the other hand, allows optimizing each of the lasering steps independently from each other, thereby enabling improvements for the processing and resulting solar cell.

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First Claim