SEMICONDUCTOR DEVICES COMPRISING EDGE DOPED GRAPHENE AND METHODS OF MAKING THE SAME
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United States of America Patent
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Issued Date -
Jan 15, 2015
app pub date -
Dec 20, 2013
filing date -
Jul 9, 2013
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Abandoned
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Abstract
A method of forming an edge-doped graphene channel is described. The method involves selectively removing graphene from a graphene layer on a substrate in the presence of a dopant to form graphene channels. The dopant forms bonds with carbon atoms on the edge of the graphene such that the graphene channels are edge doped. An article of manufacture is also provided which includes a substrate layer, one or more edge-doped graphene channels on the substrate layer and a layer of an etch mask material on and coextensive with the one or more graphene channels. An article of manufacture is also provided which includes a substrate layer and one or more edge-doped graphene channels on the substrate layer, wherein each of the one or more the graphene channels has a width less than 100 nm and a carrier density greater than 5×1012 cm−3.
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