METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Jan 15, 2015
app pub date -
Dec 15, 2011
filing date -
Dec 27, 2010
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Abandoned
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Abstract
The present invention relates to a method for fabricating a substrate for a semiconductor device comprising an interface region between a first layer and a second layer having different electrical properties and an exposed surface, wherein at least the second layer includes defects and/or dislocations, the method comprising the steps of: a) removing material at one or more locations of the defects and/or dislocations, thereby forming pits, wherein the pits intersect the interface region, and b) passivating the pits. The invention also relates to a corresponding semiconductor device structure.
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