METHOD FOR MANUFACTURING SILICON EPITAXIAL WAFER
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United States of America Patent
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Issued Date -
Jan 8, 2015
app pub date -
Jan 21, 2013
filing date -
Feb 14, 2012
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Abandoned
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Abstract
The present invention provides a method for manufacturing a silicon epitaxial wafer, characterized in that a silicon epitaxial layer is formed on an N-type silicon single crystal wafer manufactured by doping with arsenic to set a resistivity to 1.0 to 1.7 mΩcm and further doping with carbon, nitrogen, or both carbon and nitrogen. As a result, there can be provided the method for manufacturing a silicon epitaxial wafer that can suppress occurrence of stacking faults at the time of performing epitaxial growth on the arsenic-doped super-low resistance silicon single crystal wafer.
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