VAPOR PHASE GROWTH APPARATUS AND VAPOR PHASE GROWTH METHOD
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United States of America Patent
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Issued Date -
Jan 8, 2015
app pub date -
Jun 30, 2014
filing date -
Jul 2, 2013
priority date (Note) -
Abandoned
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Abstract
A vapor phase growth apparatus of an embodiment includes: a reaction chamber configured to perform a film formation process of nitride; a first gas supply path configured to supply a halogen-based gas; a second gas supply path configured to supply an ammonia gas; a shower plate disposed at the upper portion of the reaction chamber, the shower plate configured to supply the halogen-based gas and the ammonia gas into the reaction chamber, the shower plate having a first gas passage and a second gas passage in the shower plate, the first gas passage connected to the first gas supply path and the second gas passage connected to the second gas supply path, the second gas passage being separated from the first gas passage in the shower plate until the second gas passage reaches the reaction chamber; and a substrate provided inside the reaction chamber.
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