Method of formation of tin oxide semiconductor thin film doped with antimony
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United States of America Patent
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Dec 29, 2015
Grant Date -
Jan 8, 2015
app pub date -
Dec 5, 2013
filing date -
Jul 8, 2013
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Abstract
Provided is a composition for forming tin oxide semiconductor including a tin precursor compound, an antimony precursor compound, and a solvent, according to an aspect of the present disclosure. Also provided is a method of forming a tin oxide semiconductor thin film. The method includes preparing a composition including a tin precursor compound and an antimony precursor compound dissolved in a solvent; disposing the composition on a substrate; and performing a heat treatment on the substrate coated with the composition.
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