TRENCH TYPE POWER SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
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United States of America Patent
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Issued Date -
Jan 8, 2015
app pub date -
Aug 14, 2013
filing date -
Jul 8, 2013
priority date (Note) -
Abandoned
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Abstract
A trench type semiconductor power device is disclosed. An epitaxial layer is formed on a semiconductor substrate. A gate trench is formed in the epitaxial layer. A gate oxide layer and a trench gate are formed in the gate trench. A spacer is provided on the gate. A metal top structure on the gate is separated from a contact structure by the spacer. The contact structure extends into the epitaxial layer. A source doping region is provided in the epitaxial layer at least between the contact structure and the gate trench.
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