UNIFORM HEIGHT REPLACEMENT METAL GATE
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United States of America Patent
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Issued Date -
Jan 8, 2015
app pub date -
Jul 2, 2013
filing date -
Jul 2, 2013
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A method of manufacturing a semiconductor structure includes forming a raised source-drain region in a semiconductor substrate adjacent to a dummy gate and forming a chemical mechanical polish (CMP) stop layer over the gate structure and above a top surface of the semiconductor substrate. A first ILD layer is formed above the CMP stop layer. The first ILD layer is removed to a portion of the CMP stop layer located above the gate structure and a portion of the CMP stop layer located above the gate structure is also removed to expose the dummy gate. The dummy gate is replaced with a metal gate and the metal gate is polished until the CMP stop layer located above the raised source-drain region is reached.
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