SPIN INJECTION ELECTRODE STRUCTURE AND SPIN TRANSPORT ELEMENT HAVING THE SAME
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Jan 1, 2015
app pub date -
Feb 12, 2013
filing date -
Feb 14, 2012
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
To provide a spin injection electrode structure capable of injecting spins into a semiconductor with high efficiency and a spin transport element having the same. Aluminum oxide containing a γ-phase is used as a material making up a tunnel barrier layer. A protective film is formed outside the tunnel barrier layer. This allows a good spin injection electrode structure with few defects in a crystal or at a junction interface to be obtained, enables spins to be injected into a semiconductor with high efficiency, and allows a spin transport element having high output characteristics at room temperature to be provided.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully