POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
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United States of America Patent
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Issued Date -
Jan 1, 2015
app pub date -
Jun 26, 2014
filing date -
Jun 27, 2013
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Abandoned
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Abstract
In a general aspect, a power semiconductor device can include a substrate having a first surface and a second surface. The substrate can include at least one uneven portion defined on the second surface. The device can include a gate electrode and an emitter electrode disposed on the first surface of the substrate. A collector region of the device can be defined on at least a part of the at least one uneven portion. The device can also include a buffer layer disposed in the substrate.
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