PHOTONIC INTEGRATED CIRCUIT AND FABRICATION PROCESS

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United States of America Patent

SERIAL NO

14311496

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Abstract

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A photonic integrated circuit may include a silicon layer including a waveguide and at least one other photonic component. The photonic integrated circuit may also include a first insulating region arranged above a first side of the silicon layer and encapsulating at least one metallization level, a second insulating region arranged above a second side of the silicon layer and encapsulating at least one gain medium of a laser source optically coupled to the waveguide.

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Patent Owner(s)

Patent OwnerAddress
STMICROELECTRONICS (CROLLES 2) SAS850 RUE JEAN MONNET CROLLES 38920
STMICROELECTRONICS SA29 BOULEVARD ROMAIN ROLLAND MONTROUGE 92120

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chantre, Alain Seyssins, FR 34 314
Cremer, Sébastien Sassenage, FR 17 99

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