Photo Sensing Chip Having a Plurality of Photo Sensors and Manufacturing Method Thereof
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United States of America Patent
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Issued Date -
Dec 25, 2014
app pub date -
Jun 4, 2014
filing date -
Jun 20, 2013
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Abandoned
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Abstract
A photo sensing chip and a manufacturing method thereof are disclosed. The photo sensing chip includes a silicon substrate and a plurality of photo sensors formed on the silicon substrate. The photo sensors include a first photo sensor and a second photo sensor. The first photo sensor has a first P-N junction and a first depletion region is formed at first P-N junction for receiving a first light band of an incident light to generate a first photo current. The second photo sensor has a second P-N junction and a second depletion region is formed at second P-N junction for receiving a second light band of the incident light to generate a second photo current. A first process parameter corresponds to the first depletion region and a second process parameter corresponds to the second depletion region, wherein the first process parameter and the second process parameter are different.
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