GERMANIUM STRUCTURE, GERMANIUM FIN FIELD EFFECT TRANSISTOR STRUCTURE AND GERMANIUM COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TRANSISTOR STRUCTURE
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United States of America Patent
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Issued Date -
Dec 25, 2014
app pub date -
Jun 20, 2013
filing date -
Jun 20, 2013
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Abandoned
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Abstract
A germanium (Ge) structure includes a substrate, a Ge layer and at least a Ge spatial structure. The Ge layer is formed on the substrate, and a surface of the Ge layer is a Ge {110} lattice plane. The Ge spatial structure is formed in the Ge layer and includes a top surface and a sidewall surface, wherein the top surface is a Ge {110} lattice plane and the sidewall surface is perpendicular to the top surface. An axis is formed at a junction of the sidewall surface and the top surface, and an extensive direction of the axis is parallel to a Ge [112] lattice vector on the surface of the Ge layer, therefore the sidewall surface is a Ge {111} lattice plane. Because Ge {111} surface channels have very high electron mobility, this Ge spatial structure may be applied for fabricating high-performance Ge semiconductor devices.
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