SUBSTRATE SUPPORT APPARATUS AND SUBSTRATE PROCESS APPARATUS HAVING THE SAME
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United States of America Patent
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Dec 25, 2014
app pub date -
Jun 20, 2014
filing date -
Jun 21, 2013
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Abstract
Provided is a substrate processing apparatus. The substrate processing apparatus includes a chamber in which a processing space is defined, a substrate support disposed in the chamber and supporting a substrate; and an upper electrode to which a radio frequency (RF) power is applied, the upper electrode facing the substrate support. The substrate support includes a plurality of ground electrodes spaced apart from each other and independently controlled so that plasma is uniformly generated to an edge area of the substrate support between the upper electrode and the substrate support. The substrate processing apparatus may uniformly control plasma distribution or density on a substrate and a periphery of the substrate and may uniformly control plasma distribution or density in the central area of the substrate and the edge area of the substrate.
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