TSV Front-top Interconnection Process
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United States of America Patent
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Issued Date -
Dec 18, 2014
app pub date -
May 7, 2014
filing date -
Jun 13, 2013
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A TSV front-top interconnection process is provided. In an embodiment of the present invention, the stress concentration area of a TSV copper pillar is eliminated, which reduces the possibility of generating delamination or cracks between an insulating layer and the substrate due to stress. Meanwhile, the defect of the existing process that the TSV copper pillar may expose after an electroplating and annealing process is re-used to achieve the interconnection between the TSV copper pillar and the metal redistribution layer.
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