VAPOR PHASE GROWTH APPARATUS AND VAPOR PHASE GROWTH METHOD

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United States of America Patent

SERIAL NO

14301666

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Abstract

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A vapor phase growth apparatus of an embodiment includes: a reaction chamber; a shower plate disposed in the upper portion of the reaction chamber to supply a gas into the reaction chamber; a support portion provided below the shower plate inside the reaction chamber to place a substrate thereon; a process gas supply line that supplies a process gas; and a purging gas supply line that supplies a gas obtained by mixing first and second purging gases selected from hydrogen and an inert gas. Then, an inner area of the shower plate is provided with process gas ejection holes, and an outer area of the shower plate is provided with purging gas election holes. Then, the process gas supply line is connected to the process gas ejection holes, and the purging gas supply line is connected to the purging gas ejection holes.

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Patent Owner(s)

Patent OwnerAddress
NUFLARE TECHNOLOGY INC8-1 SHINSUGITA-CHO ISOGO-KU YOKOHAMA-SHI KANAGAWA 2358522 ?2358522

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
SATO, Yuusuke Tokyo, JP 116 1528
YAMADA, Takumi Kanagawa, JP 61 122

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