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Abstract

A method for producing a memory device with nanoparticles, comprising the steps of:

a) forming, in a semi-conductor substrate, source and drain regions, and at least one first dielectric on a zone of the substrate arranged between the source and drain regions and intended to form a channel of the memory device,b) deposition of an ionic liquid, comprising nanoparticles of an electrically conductive material in suspension, covering the first dielectric,c) formation of a deposition of nanoparticles on the first dielectric,d) removal of the remaining ionic liquid,e) forming a second dielectric and a control gate on at least one part of the deposition of nanoparticles.

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First Claim