SEMICONDUCTOR MEMORY DEVICE AND OPERATION METHOD THEREOF

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United States of America Patent

APP PUB NO 20140369128A1
SERIAL NO

14106574

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Abstract

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A semiconductor memory device includes a memory cell suitable for having a predetermined cell state based on a data stored therein, a control signal generation unit suitable for generating a control signal for changing the cell state of the memory cell during a reading operation, an information storage unit suitable for storing a variation status information of the control signal to which a moment when the cell state of the memory cell changes is reflected, and an output unit suitable for outputting the variation status information of the control signal stored in the information storage unit as a signal corresponding to the data stored in the memory cell.

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Patent Owner(s)

Patent OwnerAddress
SK HYNIX INCGYEONGGI DO SOUTH KOREA GYEONGGI-DO
INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY222 WANGSIMNI-RO SEONGDONG-GU SEOUL 04763

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHOI, Sung-Wook Gyeonggi-do, KR 79 1246
HAM, Jung-Hoon Seoul, KR 2 2
KIM, Young-Il Seoul, KR 173 1339
LEE, Sang-Sun Seoul, KR 8 58

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Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges138131843216987634021171552901 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +010020030040050060070080090010001100120013001400

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