SEMICONDUCTOR MANUFACTURING PROCESS AND STRUCTURE THEREOF

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United States of America Patent

SERIAL NO

14474558

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Abstract

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A semiconductor manufacturing process includes the following steps of providing a silicon substrate having at least one connection pad and a protection layer, forming a first seed layer having at least one first section and at least one second section, forming a first photoresist layer, forming a first buffer layer having a coupling portion and a cladding portion, removing the first photoresist layer, removing the second section of the first seed layer to form a first under bump metallurgy layer, forming a support layer on the protection layer and the first buffer layer, the first under bump metallurgy layer has a first ring wall, the first buffer layer has a second ring wall, wherein the first ring wall, the second ring wall and the cladding portion are cladded by the support layer, and forming a connection portion and covering the coupling portion with the connection portion.

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Patent Owner(s)

Patent OwnerAddress
CHIPBOND TECHNOLOGY CORPORATIONNO 3 LIHSIN 5 RD HSINCHU SCIENCE PARK HSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hsieh, Yung-Wei Hsinchu City, TW 15 41
Shih, Cheng-Hung Changhua County, TW 46 85
Wang, Kai-Yi New Taipei City, TW 6 1

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