MOS device assembly

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United States of America Patent

PATENT NO 10026734
APP PUB NO 20140367796A1
SERIAL NO

14358067

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Abstract

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A MOS device assembly having at least two transistors, each transistor having a gate region. The dimensions of the gate region of the first transistor are different from the dimensions of the gate region of the second transistor. The transconductance of the MOS device assembly is substantially uniform when the gate regions of the first and second transistors are biased using the same voltage.

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Patent Owner(s)

Patent OwnerAddress
X-FAB SEMICONDUCTOR FOUNDRIES GMBHHAARBERGSTR 67 ERFURT 99097

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chu, Tsui Ping Kuching, CN 7 17
Liew, Foo Sen Kuching, MY 2 3
Toner, Brendan Dungiven, IE 7 19

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