Multi-layer compound precursor with CuSe thermal conversion to Cu2-xSe for two-stage CIGS solar cell absorber synthesis
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United States of America Patent
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Issued Date -
Dec 18, 2014
app pub date -
Jun 17, 2013
filing date -
Jun 17, 2013
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Abandoned
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Abstract
Fabricating a layered precursor includes depositing a first film including a first indium gallium selenide compound on a substrate; then depositing a second film including a first CuSe compound; then heating the substrate, the first film and the second film to convert the first CuSe compound in the second film to a first Cu2-xSe (0=
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