SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
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United States of America Patent
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Issued Date -
Dec 11, 2014
app pub date -
Jul 18, 2012
filing date -
Jul 3, 2012
priority date (Note) -
Abandoned
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Abstract
The present application discloses a method for manufacturing a semiconductor device, comprising: forming a T-shape dummy gate structure on the substrate; removing the T-shape dummy gate structure and retaining a T-shape gate trench; filling successively a gate insulation layer and a metal layer in the T-shape gate trench, wherein the metal layer forms the T-shape metal gate structure. According to the semiconductor device manufacturing method disclosed in the present application, the overhang phenomenon and the formation of voids are avoided in the subsequent metal gate filling process by forming a T-shape dummy gate and a T-shape gate trench, and the device performance is improved.
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