LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME

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United States of America Patent

APP PUB NO 20140361327A1
SERIAL NO

14345382

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Abstract

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The present invention relates to a light emitting diode and a method of manufacturing same. The light emitting diode includes: a first conductive semiconductor layer; a plurality of mesas that are disposed spaced apart from one another on the first conductive semiconductor layer, each mesa including an active layer and a second conductive semiconductor layer; reflective electrodes that are respectively disposed on the plurality of mesas and come into ohmic contact with the second conductive semiconductor layer; openings that cover the plurality of mesas and the first conductive semiconductor layer, are electrically insulated from the mesas, and expose the reflective electrodes to the upper region of each mesa; and a current spreading layer that comes into ohmic contact with the first conductive semiconductor layer. Thus, a light emitting diode that improves current spreading performance may be provided.

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Patent Owner(s)

Patent OwnerAddress
SEOUL VIOSYS CO LTDGYEONGGI DO SOUTH KOREA GYEONGGI-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chae, Jong Hyeon Ansan-si, KR 171 1261
Cho, Dae Sung Ansan-si, KR 64 739
In, Chi Hyun Ansan-si, KR 26 122
Jang, Jong Min Ansan-si, KR 150 996
Lee, Joon Sup Ansan-si, KR 49 402
Lee, Kyu Ho Ansan-si, KR 80 530
Roh, Won Young Ansan-si, KR 53 532
Suh, Daewoong Ansan-si, KR 138 1311

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