SrRuO3 FILM DEPOSITION METHOD
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United States of America Patent
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Jun 20, 2014
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Dec 22, 2011
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Abstract
The present invention provides a SrRuO3 film manufacturing method capable of depositing high-quality SrRuO3 film while achieving a high deposition rate and preventing occurrence of abnormal discharge in the process of depositing the SrRuO3 film by DC magnetron sputtering. An embodiment of the present invention is a SrRuO3 film deposition method by offset rotary deposition-type DC magnetron sputtering, which includes depositing SrRuO3 film on a substrate at a deposition pressure of 1.0 Pa or more and less than 8.0 Pa in an oxygen-containing atmosphere.
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