MANUFACTURING METHODS OF SEMICONDUCTOR SUBSTRATES
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United States of America Patent
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Issued Date -
Dec 4, 2014
app pub date -
Jul 16, 2013
filing date -
May 28, 2013
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Abandoned
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Abstract
The present invention discloses manufacturing methods of semiconductor substrates. The method includes following steps: providing a semiconductor substrate with a nucleation layer, forming a microparticle etching mask on the nucleation layer, etching the nucleation layer, filling sol-gel into etched notches of the semiconductor substrate, removing the microparticle etching mask, performing growth of epitaxy rods and performing lateral connection of the top of the epitaxy rods to form a defect-free semiconductor substrate. The production methods of the present invention can confine the defects from the nucleation layer or the epitaxy rods to the epitaxy rods so as to generate a defect-free semiconductor substrate, that is, a semiconductor substrate with a defect-free growth film, after the lateral connection of the top of the epitaxy rods.
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