SCHOTTKY RECTIFIER
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United States of America Patent
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Issued Date -
Dec 4, 2014
app pub date -
Aug 14, 2014
filing date -
Oct 21, 2010
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Abstract
A semiconductor rectifier includes a semiconductor substrate having a first type of conductivity. A first layer, which is formed on the substrate, has the first type of conductivity and is more lightly doped than the substrate. A second layer having a second type of conductivity is formed on the substrate and a metal layer is disposed over the second layer. The second layer is lightly doped so that a Schottky contact is formed between the metal layer and the second layer. A first electrode is formed over the metal layer and a second electrode is formed on a backside of the substrate.
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